FDS3690 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 100V N-Channel PowerTrench MOSFET

February 2000
PRELIMINARY
FDS3690
100V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R_DS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
• DC/DC converter
• Motor Driver
Features
• 5 A, 100 V.
RDS(ON) = 0.059 Ω @ VGS = 10 V
RDS(ON) = 0.066 Ω @ VGS = 6 V
• Fast switching speed.
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
D
D
D
D
G
SS
SO-8 S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3690
FDS3690
13’’
Ratings
100
± 20
5
40
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS3690 Rev B(W)