FDS3672_12 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 7.5A, 22mΩ

April 2012
FDS3672
N-Channel PowerTrench^® MOSFET
100V, 7.5A, 22mΩ
Features
• r_DS(ON) = 19mΩ (Typ.), V_GS = 10V, I_D = 7.5A
• Q_g(tot) = 28nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
Formerly developmental type 82763
Branding Dash
5
1
2
3
4
SO-8
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_A = 25^oC, V_GS = 10V, R_θJA = 50^oC/W)
Continuous (T_A = 100^oC, V_GS = 10V, R_θJA = 50^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Thermal Characteristics
R_θJA
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
Package Marking and Ordering Information
Device Marking
FDS3672
Device
FDS3672
Package
SO-8
Reel Size
330mm
5
4
6
3
7
2
8
1
Ratings
100
±20
7.5
4.8
Figure 4
416
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/^oC
o_C
50
o_C/W
85
o_C/W
25
o_C/W
Tape Width
12mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDS3672 Rev. C2