FDS3612 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 100V N-Channel PowerTrench MOSFET

March 2001
FDS3612
100V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R_DS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
• DC/DC converter
• Motor Driver
Features
• 3.4 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V
RDS(ON) = 130 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (14 nC typ)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3612
FDS3612
13’’
Ratings
100
± 20
3.4
20
2.5
1.2
1.0
–55 to +175
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDS3612 Rev B1(W)