FDS3601 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 100V Dual N-Channel PowerTrench MOSFET

August 2001
FDS3601
100V Dual N-Channel PowerTrench^ MOSFET
General Description
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R_DS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
• 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V
RDS(ON) = 530 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (3.7nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3601
FDS3601
13’’
5
6
Q1
7
Q2
8
Ratings
100
±20
1.3
6
2
1.6
1.0
0.9
–55 to +175
78
40
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDS3601 Rev C(W)