FDS3570 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench™ MOSFET

May 1999
PRELIMINARY
FDS3570
80V N-Channel PowerTrench^TM MOSFET
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R_DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 9 A, 80 V. R_DS(ON) = 0.019 Ω @ V_GS = 10 V
R_DS(ON) = 0.022 Ω @ V_GS = 6 V.
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• High power and current handling capability.
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3570
FDS3570
13’’
5
6
7
8
Ratings
80
±20
9
50
2.5
1.2
1
-55 to +150
50
25
Tape Width
12mm
1999 Fairchild Semiconductor Corporation
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS3570 Rev. B