FDS3512 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 80V N-Channel PowerTrench MOSFET

May 2001
FDS3512
80V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 4.0 A, 80 V
RDS(ON) = 70 mΩ @ VGS = 10 V
RDS(ON) = 80 mΩ @ VGS = 6 V
• Low gate charge (13nC Typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS3512
FDS3512
13’’
5
4
6
3
7
2
8
1
Ratings
80
±20
4.0
30
2.5
1.2
1.0
–55 to +175
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
 2001 Fairchild Semiconductor Corporation
FDS3512 Rev B1 (W)