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| FDS2734 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm | |||
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August 2006
FDS2734
N-Channel UItraFET Trench® MOSFET
tm
250V, 3.0A, 117mâ¦
Features
 Max rDS(on) =117m⦠at VGS =10V, ID = 3.0A
 Max rDS(on) =126m⦠at VGS = 6V, ID = 2.8A
 Fast switching speed
 High performance trench
low rDS(on)
technology for
extremely
 High power and current handling capability
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductorâs advanced UItraFET Trench®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
 DC-DC conversion
 RoHS compliant
D
D
D
D
SO-8
Pin 1
G
S
S
S
5
4
6
3
7
2
8
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
-Pulsed
(Note 1a)
EAS
Single Pulse Avalanche Energy
Power dissipation
PD
Power dissipation
(Note 3)
(Note 1a)
(Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Ratings
250
±20
3.0
50
12.5
2.5
1.0
-55 to 150
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction- to -Ambient
Thermal Resistance, Junction- to- Ambient
Thermal Resistance, Junction -to- Case
(Note 1a)
50
(Note 1b)
125
(Note 1)
25
Package Marking and Ordering Information
Device Marking
FDS2734
Device
FDS2734
Package
SO-8
Reel Size
13ââ
Tape Width
12mm
Units
V
V
A
mJ
W
oC
oC/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS2734 Rev. B
www.fairchildsemi.com
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