FDS2672_F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench MOSFET

FDS2672_F085
N-Channel UltraFET Trench^® MOSFET
200V, 3.9A, 70mΩ
Features
General Description
February 2010
tm
„ Max r_DS(on) = 70mΩ at V_GS = 10V, I_D = 3.9A
„ Max r_DS(on) = 80mΩ at V_GS = 6V, I_D = 3.5A
„ Fast switching speed
„ High performance trench technology for extremely low
r_DS(on)
„ Qualified to AEC Q101
„ RoHS compliant
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench^®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
„ DC-DC conversion
D
D
D
D
SO-8
Pin 1
G
S
S
S
5
4
6
3
7
2
8
1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Drain Current -Continuous
I_D
-Pulsed
E_AS
Single Pulse Avalanche Energy
Power Dissipation
P_D
Power Dissipation
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
200
±20
3.9
50
37.5
2.5
1.0
-55 to 150
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1)
25
(Note 1a)
50
(Note 1b)
125
Package Marking and Ordering Information
Device Marking
FDS2672
Device
FDS2672_F085
Reel Size
13’’
Tape Width
12mm
Units
V
V
A
mJ
W
°C
°C/W
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDS2672_F085 Rev. A
www.fairchildsemi.com