FDS2672 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

August 2006
FDS2672
N-Channel UltraFET Trench^® MOSFET
tm
200V, 3.9A, 70mΩ
Features
General Description
„ Max r_DS(on) = 70mΩ at V_GS = 10V, I_D = 3.9A
„ Max r_DS(on) = 80mΩ at V_GS = 6V, I_D = 3.5A
„ Fast switching speed
„ High performance trench technology for extremely low
r_DS(on)
„ RoHS compliant
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench^®
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
„ DC-DC conversion
D
D
D
D
SO-8
Pin 1
G
S
S
S
5
4
6
3
7
2
8
1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DS
Drain to Source Voltage
V_GS
Gate to Source Voltage
Drain Current -Continuous
I_D
-Pulsed
E_AS
Single Pulse Avalanche Energy
Power Dissipation
P_D
Power Dissipation
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
200
±20
3.9
50
37.5
2.5
1.0
-55 to 150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1)
25
(Note 1a)
50
(Note 1b)
125
Package Marking and Ordering Information
°C/W
Device Marking
FDS2672
Device
FDS2672
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS2672 Rev. B
www.fairchildsemi.com