FDR8521L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – P-Channel MOSFET With Gate Driver For Load Switch Application

August 2000
FDR8521L
P-Channel MOSFET With Gate Driver For Load Switch Application
General Description
This device is designed for configuration as a load switch
and is particularly suited for power management in por-
table battery powered electronic equipment. Designed to
operate from 3V to 20V input and supply up to 2.9A, the
device features a small N-Channel MOSFET (Q1) together
with a large P-Channel Power MOSFET (Q2) in a single
SO-8 package.
Applications
• Power management
• Load switch
Features
•
V
DROP
=
0.07
V
@
V=
IN
12
V,
I=
L
1
A.R_(ON)
=
0.07
Ω
V
DROP
=
0.115
V
@
V=
IN
5
V,
I=
L
1
A.R_(ON)
=
0.115
Ω.
•
V
DROP
=
0.2
V
@
V=
IN
12
V,
I =2.9
L
A.R_(ON)
=
0.07
Ω
V
DROP
=
0.2
V
@
V=
IN
5
V,I =
L
1.8
A.R_(ON)
=
0.115
Ω.
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6kV Human Body Model).
• High density cell design for extremely low on-resistance.
pin 1
SuperSOT ^TM-8
5 ^{VOU T,C1,CO}
Q2
6 VOU T,C1 ,CO
R2 7
Q1
R2 8
4 VIN,R1,Ci
3 R1,R2,C1
2 C1,CO
IN
1
VON/ OFF
See Application Cir cuit
EQUIVALENT CIRCUIT
VDR OP
+
-
ON/ OFF
OUT
Absolute Maxim um Ratings ^TA^{=25oC unless otherwise noted}
Symbol
VIN
V O N/O FF
ID
PD
TJ, Tstg
ESD
Parameter
Input Voltage Range
(Note 1)
On/Off Voltage Range
Load Current - Continuous
(Note 2)
- Pulsed
Maximum Power Dissipation
(Note 2)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human-Body-Model (100pf/1500 Ohm)
Ratings
3 - 20
2.5 - 8
2.9
8
0.8
-55 to +150
6
Units
V
V
A
W
°^C
kV
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 2)
(Note 2)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
8521L
FDR8521L
13’’
156
40
Tape width
12mm
°^C/W
°^C/W
Quantity
3000 units
2000 Fairchild Semiconductor International
FDR8521L Rev. C