FDR844P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

October 2001
FDR844P
P-Channel 1.8V Specified PowerTrench^ MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Power management
• Load switch
• Battery protection
Features
• –10 A, –20 V. RDS(ON) = 11 mΩ
RDS(ON) = 14 mΩ
RDS(ON) = 20 mΩ
• Fast switching speed
@ VGS = –4.5 V
@ VGS = –2.5 V
@VGS = –1.8 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
D
S
G
D
TM
SuperSOT -8
D
D
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.844P
FDR844P
13’’
Ratings
–20
±8
–10
–50
1.8
1.0
0.9
-55 to +150
70
20
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDR844P Rev A1(W)