FDR842P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

December 2001
FDR842P
P-Channel 1.8V Specified PowerTrench^ MOSFET
General Description
This P-Channel –1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Power management
• Load switch
• Battery protection
Features
• –11 A, –12 V RDS(ON) = 9 mΩ @ VGS = –4.5 V
RDS(ON) = 12 mΩ @ VGS = –2.5 V
RDS(ON) = 16 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
D
S
G
D
SuperSOT^TM -8
D
D
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDR842P
FDR842P
13’’
Ratings
–12
±8
–11
–50
1.8
1.0
0.9
–55 to +150
70
20
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDR842P Rev D (W)