FDR838P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrenchTM MOSFET

March 1999
FDR838P
P-Channel 2.5V Specified PowerTrench^TM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• Load switch
• Motor driving
• Power Management
Features
• -8 A, -20 V. R_DS(ON) = 0.017 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.024 Ω @ V_GS = -2.5 V
• Low gate charge (30nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
S
D
D
S
G
D
TM
SuperSOT -8
D
D
5
4
6
3
7
2
8
1
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.838P
FDR838P
13’’
Ratings
-20
±⁸
-8
-50
1.8
1.0
0.9
-55 to +150
70
20
Tape Width
12mm
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
3000 units
©1999 Fairchild Semiconductor Corporation
FDR838P, Rev. C