FDR836P Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified MOSFET

April 1999
FDR836P
P-Channel 2.5V Specified MOSFET
General Description
SuperSOT^TM -8 P-Channel enhancement mode power
field effect transistors are produced using Fairchild’s
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to mini-
mize on-state resistance and provide superior switch-
ing performance. These devices are particularly suited
for low voltage applications such as battery powered
circuits or portable electronics where low in-line power
loss, fast switching and resistance to transients are
needed.
Features
• -6.1 A, -20 V. R_DS(ON) = 0.030 W @ V_GS = -4.5 V
R_DS(ON) = 0.040 W @ V_GS = -2.5 V
• High density cell design for extremely low R_DS(ON).
• Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
S
D
D
S
G
D
TM
SuperSOT -8
D
D
5
4
6
3
7
2
8
1
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.836P
FDR836P
13’’
ã 1999 Fairchild Semiconductor Corporation
Ratings
-20
±⁸
-6.1
-18
1.8
1.0
0.9
-55 to +150
70
20
Tape Width
12mm
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
3000 units
FDR836P, Rev. C