FDR8321L Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel MOSFET With Gate Driver For Load Switch Application

August 2000
FDR8321L
P-Channel MOSFET With Gate Driver For Load Switch Application
General Description
Features
This device is designed for configuration as a load
switch and is particularly suited for Power
Management in portable battery powered electronic
equipment. Designed to operate from 2.5V to 8V input
and supply up to 2.9A. The device features a small
N-Channel MOSFET (Q1) together with a large
P-Channel power MOSFET (Q2) in a single
SuperSOT^TM-8 package.
V_DROP = 0.2V @ V_IN= 5V, I_L= 2.9A. R_DS(ON) = 0.070 Ω
V_DROP = 0.2V @ V_IN= 2.5V, I_L= 2A. R_DS(ON) = 0.105 Ω.
V_ON/OFF Zener protection for ESD ruggedness (>6KV Human
Body Model).
High density cell design for extremely low on-resistance.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
pin 1
SuperSOT ^TM-8
5 ^VOUT,C1,CO
Q2
6 VOUT,C1,CO
R2 7
Q1
R2 8
4 VIN,R1,Ci
3 R1,R2,C1
2 C1,CO
1
VON/OFF
See Application Circuit
EQUIVALENT CIRCUIT
IN
+V^DROP -
OUT
O N / O FF
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_IN
V_ON/OFF
I_L
Input Voltage Range
On/Off Voltage Range
Load Current @ V_DROP= 0.2V - Continuous
- Pulsed
(Note 1)
P_D
Maximum Power Dissipation
(Note 2)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 2)
R_θJC
Thermal Resistance, Junction-to-Case (Note 2)
FDR8321L
2.5 - 8
1.5 - 8
2.9
10
0.8
-55 to 150
156
40
Units
V
V
A
W
°C
°C/W
°C/W
©2000 Fairchild Semiconductor International
FDR8321L Rev. C