FDR8305N Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

November 1999
FDR8305N
Dual N-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• Load switch
• Motor driving
• Power Management
Features
• 4.5 A, 20 V. R_DS(ON) = 0.022 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.028 Ω @ V_GS = 2.5 V.
• Low gate charge (16.2nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• Small footprint (38% smaller than a standard SO-8);low
profile package (1 mm thick); power handling capability
similar to SO-8.
D2
D2
D1
5
D1
6
S2
7
G2
SuperSOT ^TM-8
S1
G1
8
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.8305
FDR8305N
13’’
4
3
2
1
Ratings
20
±8
4.5
20
0.8
-55 to +150
Units
V
V
A
W
°C
156
°C/W
40
°C/W
Tape Width
12mm
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FD8305N Rev. C