FDR6580 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Chennal 2.5V Specified PowerTrench™ MOSFET

April 1999
ADVANCE INFORMATION
FDR6580
N-Chennal 2.5V Specified PowerTrench^TM MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
• Load switch
• Motor driving
• Power Management
Features
• 11 A, 20 V. R_DS(ON) = 0.009 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.013 Ω @ V_GS = 2.5 V.
• Low gate charge.
• High performance trench technology for extremely
low R_DS(ON).
• Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
S
D
D
S
G
D
TM
SuperSOT -8
D
D
5
4
6
3
7
2
8
1
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.6580
FDR6580
13’’
Ratings
20
±⁸
11
50
1.8
1.0
0.9
-55 to +150
70
20
Tape Width
12mm
Units
V
V
A
W
°^C
°^C/W
°^C/W
Quantity
3000 units
1999 Fairchild Semiconductor Corporation
FDR6580, Rev. A