FDR4420A Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Single N-Channel, Logic Level, PowerTrenchTM MOSFET

June 1998
FDR4420A
Single N-Channel, Logic Level, PowerTrench^TM MOSFET
General Description
The SuperSOT-8 family of N-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.
These MOSFETs are produced using Fairchild Semiconductor's
advanced PowerTrench process that has been tailored to
minimize the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where small package size is required
without compromising power handling and fast switching.
Features
11 A, 30 V. R_DS(ON) = 0.009 Ω @ V_GS = 10 V,
R_DS(ON) = 0.013 Ω @ V_GS = 4.5 V.
Fast switching speed.
Low gate charge.
Small footprint 38% smaller than a standard SO-8.
Low profile package(1mm thick).
Power handling capability similar to SO-8.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
S
D
D
S
4420A
G
D
pin 1
D
SuperSOT ^TM-8
D
SO-8
Absolute Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Draint Current - Continuous
- Pulsed
(Note 1a)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
SOT-223
5
6
7
8
FDR4420A
30
±20
11
40
1.8
1
0.9
-55 to 150
70
20
SOIC-16
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDR4420 Rev.D