FDR4410 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

April 1998
FDR4410
N-Channel Enhancement Mode Field Effect Transistor
General Description
The FDR4410 has been designed as a smaller, low cost
alternative to the popular Si4410DY.
The SuperSOT^TM-8 package is 40% smaller than the SO-8
package.
The SuperSOT^TM-8 advanced package design and
optimized pinout allow the typical power dissipation to be
similar to the bigger SO-8 package.
Features
9.3 A, 30 V. R_DS(ON) = 0.013 Ω @ V_GS = 10 V
R_DS(ON) = 0.020 Ω @ V_GS = 4.5 V.
High density cell design for extremely low R_DS(ON).
Proprietary SuperSOT^TM-8 small outline surface mount
package with high power and current handling capability.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
S
D
D
S
4410
G
D
D
D ^{pin 1}
SuperSOT ^TM-8
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Draint Current - Continuous
- Pulsed
(Note 1a)
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDR4410
30
±20
9.3
40
1.8
1
0.9
-55 to 150
70
20
Units
V
V
A
W
°C
°C/W
°C/W
FDR4410 Rev.C