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FDPF7N60NZ Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel MOSFET 600V, 6.5A, 1.25
FDP7N60NZ / FDPF7N60NZ
N-Channel MOSFET
600V, 6.5A, 1.25
Features
• RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A
• Low gate charge ( Typ. 13nC)
• Low Crss ( Typ. 7pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• ESD Improved capability
• RoHS compliant
September 2010
UniFET-II TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
(potted)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP7N60NZ FDPF7N60NZ
600
±30
6.5
6.5*
3.9
3.9*
26
26*
275
6.5
14.7
10
147
33
1.2
0.26
-55 to +150
300
FDP7N60NZ
0.85
0.5
62.5
FDPF7N60NZ
3.8
-
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2010 Fairchild Semiconductor Corporation
1
FDP7N60NZ / FDPF7N60NZ Rev. A
www.fairchildsemi.com