FDPF5N50NZU Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM II Ultra FRFETTM MOSFET

March 2013
FDPF5N50NZU
N-Channel UniFET^TM II Ultra FRFET^TM MOSFET
500 V, 3.9 A, 2.0 
Features
• R_DS(on) = 1.7  (Typ.) @ V_GS = 10 V, I_D = 1.95 A
• Low Gate Charge (Typ. 9 nC)
• Low C_rss (Typ. 4 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFET^TM II MOSFET is Fairchild Semiconductor^®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. UniFET II Ultra FRFET^TM MOSFET has much
superior body diode reverse recovery performance. Its t_rr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET II Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switch-
ing power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
D
S
TO-220F
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 1)
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1
©2012 Fairchild Semiconductor Corporation
FDPF5N50NZU Rev. C0
G
S
FDPF5N50NZU
500
±25
3.9*
2.3*
15*
135
3.9
7.8
20
30
0.24
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
FDPF5N50NZU
4.1
62.5
Unit
o_C/W
www.fairchildsemi.com