FDPF51N25YDTU Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel UniFETTM MOSFET 250 V, 51 A, 60 mΩ

FDP51N25 / FDPF51N25
N-Channel UniFET^TM MOSFET
250 V, 51 A, 60 mΩ
Features
• R_DS(on) = 48 mΩ (Typ.) @ V_GS = 10 V, I_D = 25.5 A
• Low Gate Charge (Typ. 55 nC)
• Low C_rss (Typ. 63 pF)
Applications
• PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
November 2013
Description
UniFET^TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
D
GDS
TO-220 ^GDS
G
TO-220F
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
Parameter
V_DSS
I_D
I_DM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
V_GSS
E_AS
I_AR
E_AR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
T_J, T_STG
T_L
Power Dissipation
(T_C = 25°C)
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
G
TO-220F
Y-formed
S
FDP51N25
51
30
FDPF51N25 /
FDPF51N25YDTU
250
51*
30*
204
204*
± 30
1111
51
32
4.5
320
38
3.7
0.3
-55 to +150
300
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDP51N25
0.39
62.5
FDPF51N25 /
FDPF51N25YDTU
3.3
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2008 Fairchild Semiconductor Corporation
1
FDP51N25 / FDPF51N25 Rev. C1
www.fairchildsemi.com