FDPF3860TYDTU Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 20 A, 38.2 mΩ

December 2013
FDPF3860T
N-Channel PowerTrench^® MOSFET
100 V, 20 A, 38.2 mΩ
Features
• R_DS(on) = 29.1 mΩ (Typ.) @ V_GS = 10 V, I_D = 5.9 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Consumer Appliances
• LCD/LED/PDP TV
• Synchronous Rectification
• Uninterruptible Power Supply
• Micro Solar Inverter
D
GDS
G
TO-220F
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate Above 25^oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF3860T
100
±20
20
12.7
80
278
20
3.4
15
33.8
0.27
-55 to +150
300
FDPF3860T
3.7
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FDPF3860T Rev. C5
www.fairchildsemi.com