FDPF320N06L Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60V, 21A, 25mΩ

December 2010
FDPF320N06L
N-Channel PowerTrench^® MOSFET
60V, 21A, 25mΩ
Features
• R_DS(on) = 20mΩ ( Typ.)@ V_GS = 10V, I_D = 21A
• R_DS(on) = 23mΩ ( Typ.)@ V_GS = 5V, I_D = 17A
• Low Gate Charge ( Typ. 23.2nC)
• Low C_rss ( Typ. 64pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC converters / Synchronous Rectification
D
GC E
TO-220F
(Retractable)
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
(Note 1)
(Note 2)
(Note 3)
FDPF320N06L
60
±20
21
15
84
66
6.0
26
0.17
-55 to +175
300
FDPF320N06L
5.8
62.5
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FDPF320N06L Rev. A4
www.fairchildsemi.com