FDPF20N50FT Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel UniFETTM FRFET® MOSFET 500 V, 20 A, 260 m

March 2013
FDP20N50F / FDPF20N50FT
N-Channel UniFET^TM FRFET^® MOSFET
500 V, 20 A, 260 m
Features
• R_DS(on) = 210 m (Typ.) @ V_GS = 10 V, I_D = 10 A
• Low Gate Charge (Typ. 50 nC)
• Low C_rss (Typ. 27 pF)
• 100% Avalanche Aested
• Improve dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
Description
UniFET^TM MOSFET is Fairchild Semiconductor^®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET^® MOSFET has been enhanced by lifetime
control. Its t_rr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
• Uninterruptible Power Supply
• AC-DC Power Supply
D
G
D
S
TO-220
GDS
G
TO-220F
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP20N50F FDPF20N50FT
500
±30
20
20*
12.9
12.9*
80
80*
1110
20
25
20
250
38.5
2.0
0.3
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
R_JC
R_CS
R_JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FDP20N50F
0.5
0.5
62.5
FDPF20N50FT
3.3
-
62.5
Unit
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FDP20N50F/ FDPF20N50FT Rev. C1
www.fairchildsemi.com