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FDPF190N15A Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 150V, 27.4A, 19mΩ | |||
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April 2011
FDPF190N15A
N-Channel PowerTrench® MOSFET
150V, 27.4A, 19mΩ
Features
⢠RDS(on) = 14.7mΩ ( Typ.)@ VGS = 10V, ID = 27.4A
⢠Low Gate Charge ( Typ. 30nC)
⢠Low Crss ( Typ. 56pF)
⢠Fast Switching
⢠100% Avalanche Tested
⢠Improved dv/dt Capability
⢠RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
⢠DC to DC Converters
⢠Synchronous Rectification for Server/Telecom PSU
⢠Battery Charger
⢠AC motor drives and Uninterruptible Power Supplies
⢠Off-line UPS
D
GDS
TO-220F
(Retractable)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
G
S
(Note 1)
(Note 2)
(Note 3)
Rating
150
±20
27.4
17.4
110
261
6.0
33
0.26
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Rating
3.8
62.5
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2011 Fairchild Semiconductor Corporation
1
FDPF190N15A Rev. A2
www.fairchildsemi.com
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