FDPF16N50UT Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – R DS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A

FDP16N50U / FDPF16N50UT
N-Channel UniFET^TM Ultra FRFET^TM MOSFET
500 V, 15 A, 480 mΩ
April 2013
Features
• R _DS(on) = 370 mΩ ( Typ.) @ V_GS = 10 V, I_D = 7.5 A
• Low Gate Charge (Typ. 32 nC)
• Low C_rss (Typ. 20 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFET^TM MOSFET is Fairchild Semiconductor^®’s high voltage MOSFET
family based on planar stripe and DMOS technology. This MOSFET is
tailored to reduce on-state resistance, and to provide better switching
performance and higher avalanche energy strength. UniFET Ultra
FRFET^TM MOSFET has much superior body diode reverse recovery
performance. Its t_rr is less than 50nsec and the reverse dv/dt immunity is
20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/
nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove
additional component and improve system reliability in certain
applications that require performance improvement of the MOSFET’s
body diode. This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
D
G
D
S
TO-220
G
D
S
TO-220F
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_JC
R_CS
R_JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Typ.
Thermal Resistance, Junction to Ambient, Max.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP16N50U FDPF16N50UT
500
±30
15
15*
9
9*
60
60*
610
15
20
20
200
38.5
1.59
0.3
-55 to +150
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
300
o_C
FDP16N50U
0.63
0.5
62.5
FDPF16N50UT
3.3
-
62.5
Unit
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FDP16N50U / FDPF16N50UT Rev. C0
www.fairchildsemi.com