FDPF14N30T Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFET MOSFET 300 V, 14 A, 290 m

FDPF14N30
N-Channel UniFET^TM MOSFET
300 V, 14 A, 290 mΩ
Features
• R_DS(on) = 290 mΩ (Max.) @ V_GS = 10 V, I_D = 7 A
• Low Gate Charge (Typ. 18 nC)
• Low C_rss (Typ. 17 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• PDP TV
• Uninterruptible Power Supply
November 2013
Description
UniFET^TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
GDS
G
TO-220F
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
FDPF14N30
300
14 *
8.4 *
56 *
±30
330
14
14
4.5
35
0.28
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FDPF14N30
3.56
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
©2007 Fairchild Semiconductor Corporation
1
FDPF14N30 Rev. C1
www.fairchildsemi.com