FDPF10N60ZUT_12 Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω

FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8Ω
May 2012
UniFET^TM
tm
Features
• R_DS(on) = 0.65Ω ( Typ.)@ V_GS = 10V, I_D = 4.5A
• Low gate charge ( Typ. 31nC)
• Low C_rss ( Typ. 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
G
GD S
TO-220F
FDPF Series
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
S
FDP10N60ZU FDPF10N60ZUT
600
±30
9
9*
5.4
5.4*
(Note 1)
36
36*
(Note 2)
100
(Note 1)
9
(Note 1)
18
(Note 3)
20
180
42
1.45
0.3
-55 to +150
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
300
o_C
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
FDP10N60ZU FDPF10N60ZUT Units
0.7
3.0
0.5
-
o_C/W
62.5
62.5
©2012 Fairchild Semiconductor Corporation
1
FDP10N60ZU/FDPF10N60ZUT Rev. C0
www.fairchildsemi.com