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FDPF085N10A Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100V, 40A, 8.5mW | |||
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FDPF085N10A
N-Channel PowerTrench® MOSFET
100V, 40A, 8.5mW
May 2011
Features
⢠RDS(on) = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A
⢠Fast Switching Speed
⢠Low Gate Charge
⢠High Performance Trench Technology for Extremely Low
RDS(on)
⢠High Power and Current Handling Capability
⢠RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
⢠DC to DC Converters
⢠Synchronous Rectification for Server/Telecom PSU
⢠Battery Charger
⢠AC motor drives and Uninterruptible Power Supplies
⢠Off-line UPS
D
GDS
TO-220F
(Retractable)
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
G
S
(Note 1)
(Note 2)
(Note 3)
Ratings
100
±20
40
28
160
269
6.0
33.3
0.22
-55 to +175
300
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RqJC
RqJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
©2011 Fairchild Semiconductor Corporation
1
FDPF085N10A Rev. A1
Ratings
4.5
62.5
Units
oC/W
www.fairchildsemi.com
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