FDP8876 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

November 2005
FDP8876
N-Channel PowerTrench^® MOSFET
30V, 71A, 8.5mΩ
General Descriptions
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
Features
„ r_DS(ON) = 8.5mΩ, V_GS = 10V, I_D = 40A
„ r_DS(ON) = 10.3mΩ, V_GS = 4.5V, I_D = 40A
„ High performance trench technology for extremely low
r_DS(ON)
„ Low gate charge
„ High power and current handling capability
„ RoHS Compliant
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
D
G
S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 25^oC, V_GS = 4.5V)
Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263,1in²copper pad area
Package Marking and Ordering Information
Device Marking
FDP8876
Device
FDP8876
Package
TO-220AB
Reel Size
Tube
Ratings
30
±20
70
64
Figure 4
180
70
-55 to 175
2.14
62
Tape Width
N/A
Units
V
V
A
A
A
mJ
W
o_C
o_C/W
o_C/W
Quantity
50 units
©2005 Fairchild Semiconductor Corporation
1
FDP8876 Rev. A
www.fairchildsemi.com