FDP8870_F085 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

FDP8870_F085
N-Channel PowerTrench^® MOSFET
30V, 156A, 4.1mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
Applications
• DC/DC converters
July 2010
Features
• r_DS(ON) = 4.1mΩ, V_GS = 10V, I_D = 35A
• r_DS(ON) = 4.6mΩ, V_GS = 4.5V, I_D = 35A
• High performance trench technology for extremely low
r_DS(ON)
• Low gate charge
• High power and current handling capability
x Qualified to AEC Q101
x RoHS Compliant
(FLANGE)
DRAIN
SOURCE
DRAIN
GATE
G
TO-220AB
FDP SERIES
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V) (Note 1)
Continuous (T_C = 25^oC, V_GS = 4.5V) (Note 1)
Continuous (T_amb = 25^oC, V_GS = 10V, with R_θJA = 62^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
Package Marking and Ordering Information
Device Marking
FDP8870
Device
FDP8870_F085
Package
TO-220AB
Reel Size
Tube
D
S
Ratings
30
±20
156
147
19
Figure 4
300
160
1.07
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
0.94
62
o_C/W
o_C/W
Tape Width
N/A
Quantity
50 units
©2010 Fairchild Semiconductor Corporation
FDP8870_F085 Rev.A