FDP8440 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 40V, 277A, 2.2mΩ

January 2009
FDP8440
tm
N-Channel PowerTrench^® MOSFET
40V, 277A, 2.2mΩ
Features
• R_DS(on) = 1.64mΩ (Typ.)@ V_GS = 10V, I_D = 80A
• Q_g(tot) = 345nC (Typ.)@ V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• RoHS Compliant
Application
• Automotive Engine Control
• Powertrain Management
• Motors, Solenoids
• Electronic Steering
• Integrated Starter/ Alternator
• Distributed Power Architectures and VRMs
• Primary Switch for 12V Systems
D
GDS
TO-220
FDP Series
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25^oC, Silicon Limited)
- Continuous (T_C = 100^oC, Silicon Limited)
- Continuous (T_C = 25^oC, Package Limited)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 2)
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A.
Thermal Characteristics
Ratings
40
±20
277*
196*
100
500
1682
306
2.04
-55 to +175
300
R_θJC
R_θCS
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink (Typ.)
Thermal Resistance, Junction to Ambient
0.49
0.5
62.5
Units
V
V
A
A
mJ
W
W/^oC
o_C
o_C
o_C/W
o_C/W
o_C/W
©2009 Fairchild Semiconductor Corporation
1
FDP8440 Rev. A6
www.fairchildsemi.com