FDP80N06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel MOSFET

FDP80N06
N-Channel MOSFET
60V, 80A, 10mΩ
Features
• R_DS(on) = 8.5mΩ ( Typ.)@ V_GS = 10V, I_D = 40A
• Low gate charge(Typ. 57nC)
• Low C_rss(Typ. 145pF)
• Fast switching
• Improved dv/dt capability
• RoHS compliant
September 2007
UniFET^TM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies,active power factor
correction, electronic lamp ballast based on half bridge topology.
D
G
G DS
TO-220
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
60
±20
80
65
320
480
80
17.6
4.5
176
1.17
-55 to +175
300
Ratings
0.85
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2007 Fairchild Semiconductor Corporation
1
FDP80N06 Rev. A
www.fairchildsemi.com