FDP8030L Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET

November 1999
FDP8030L/FDB8030L
N-Channel Logic Level PowerTrench^ MOSFET
General Description
This N-Channel Logic level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETS feature faster switching and lower
gate charge than other MOSFETS with comparable
RDS(on) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 80 A, 30 V.
RDS(ON) = 0.0035 Ω @ VGS = 10 V
RDS(ON) = 0.0045 Ω @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor
• High performance trench technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
D
D
G
D
S
G
G
TO-220
S
TO-263AB
FDP Series
FDB Series
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
PD
TJ, TSTG
TL
Total Power Dissipation @# TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Ratings
30
±20
80
300
187
1.25
-65 to +175
275
0.8
62.5
S
Units
V
V
A
W
W°C
°C
°C
°C/W
°C/W
1999 Fairchild Semiconductor Corporation
FDP8030L Rev C(W)