FDP7N50U Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

FDP7N50U/FDPF7N50U
500V N-Channel MOSFET
Features
• 5A, 500V, R_DS(on) = 1.5Ω @V_GS = 10 V
• Low gate charge ( typical 12.8 nC)
• Low C_rss ( typical 9 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
March 2007
UniFET^TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
G
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
FDP7N50U FDPF7N50U
500
5
5*
3.0
3.0 *
20
20 *
±30
270
5
8.9
4.5
89
39
0.71
0.31
-55 to +150
300
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP7N50U FDPF7N50U
1.4
3.2
0.5
--
62.5
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
1
FDP7N50U/FDPF7N50U REV. B
www.fairchildsemi.com