FDP7045L_04 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET

March 2004
FDP7045L/FDB7045L
N-Channel Logic Level PowerTrench^® MOSFET
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications resulting in DC/DC power supply
designs with higher overall efficiency.
Features
• 100 A, 30 V
RDS(ON) = 4.5 mΩ @ VGS = 10 V
RDS(ON) = 6.0 mΩ @ VGS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
D
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
PD
TJ, TSTG
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB7045L
FDB7045L
13’’
FDP7045L
FDP7045L
Tube
G
Ratings
30
± 20
100
75
300
107
0.7
–55 to +175
1.4
62.5
Tape width
24mm
n/a
S
Units
V
V
A
W
W/°C
°C
°C/W
°C/W
Quantity
800 units
45
©2004 Fairchild Semiconductor Corporation
FDP7045L/FDB7045L Rev D1(W)