FDP6676S Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET™

October 2001
FDP6676S / FDB6676S
30V N-Channel PowerTrench^ SyncFET^™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP/B6676S
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
Features
• 38 A, 30 V.
RDS(ON) = 6.5 mΩ @ VGS = 10 V
RDS(ON) = 8.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (40nC typical)
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
•
D
D
G
D
S
G
G
TO-220
S
TO-263AB
FDP Series
FDB Series
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
PD
TJ, TSTG
TL
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6676S
FDB6676S
13’’
FDP6676S
FDP6676S
Tube
Ratings
30
±16
76
150
70
0.56
–55 to +150
275
1.8
55
Tape width
24mm
n/a
S
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
Quantity
800
45
2001 Fairchild Semiconductor Corporation
FDP6676S/FDB6676S Rev. C (W)