FDP6676 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel Logic Level PowerTrench MOSFET

April 2001
FDP6676/FDB6676
30V N-Channel Logic Level PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) .
Applications
• Synchronous rectifier
• DC/DC converter
.
Features
• 42 A, 30 V.
R_DS(ON) = 6.0 mΩ @ V_GS = 10 V
R_DS(ON) = 7.5 mΩ @ V_GS = 4.5 V
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
D
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDP6676
FDP6676
Tube
FDB6676
FDB6676
13”
G
Ratings
30
± 16
84
240
93
0.48
-65 to +175
1.6
62.5
Tape width
n/a
24mm
S
Units
V
V
A
W
W°C
°C
°C/W
°C/W
Quantity
45
800 units
2000 Fairchild Semiconductor Corporation
FDP6676/FDB6676 Rev C(W)