FDP6670AS Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench SyncFET

January 2005
FDP6670AS/FDB6670AS
30V N-Channel PowerTrench^® SyncFET^™
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R_DS(ON) and low gate charge. The FDP6670AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670AS/FDB6670AS as the low-side switch in
a synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
• 31 A, 30 V.
R_DS(ON) = 8.5 mΩ @ V_GS = 10 V
R_DS(ON) = 10.5 mΩ @ V_GS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (28nC typical)
• High performance trench technology for extremely
low R_DS(ON) and fast switching
• High power and current handling capability
D
D
G
D
S
G
G
TO-220
S
TO-263AB
FDP Series
FDB Series
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
P_D
T_J, T_STG
T_L
Total Power Dissipation @ T_C = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6670AS
FDB6670AS
13’’
FDB6670AS
FDB6670AS_NL (Note 3)
13’’
FDP6670AS
FDP6670AS
Tube
FDP6670AS
FDP6670AS_NL (Note 4)
Tube
Ratings
30
±20
62
150
62.5
0.5
–55 to +150
275
2.1
62.5
Tape width
24mm
24mm
n/a
n/a
S
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
Quantity
800 units
800 units
45
45
©2005 Fairchild Semiconductor Corporation
FDP6670AS/FDB6670AS Rev A(X)