FDP6644 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

June 2001
FDP6644/FDB6644
30V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 50 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
• Low gate charge (27 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
D
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6644
FDB6644
13’’
FDP6644
FDP6644
Tube
G
Ratings
30
± 16
50
150
83
0.55
-65 to +175
1.8
62.5
Tape width
24mm
n/a
S
Units
V
V
A
A
W
W/°C
°C
°C/W
°C/W
Quantity
800 units
45
©2001 Fairchild Semiconductor Corporation
FDP6644 Rev C(W)