FDP65N06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

FDP65N06
60V N-Channel MOSFET
Features
• 65A, 60V, R_DS(on) = 0.016Ω @V_GS = 10 V
• Low gate charge ( typical 132nC)
• Low Crss ( typical 35pF)
• Fast switching
• Improved dv/dt capability
June 2006
UniFET^TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
GDS
TO-220
FDP Series
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
S
FDP65N06
60
65
41
260
± 20
430
65
13.5
4.5
135
1.08
-55 to +150
300
FDP65N06
0.92
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FDP65N06 Rev. A1
www.fairchildsemi.com