FDP6021P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 20V P-Channel 1.8V Specified PowerTrench MOSFET

April 2001
PRELIMINARY
FDP6021P/FDB6021P
20V P-Channel 1.8V Specified PowerTrench^ MOSFET
General Description
This P-Channel power MOSFET uses Fairchild’s low
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• Battery management
• Load switch
• Voltage regulator
.
Features
• –28 A, –20 V. R_DS(ON) = 30 mΩ @ V_GS = 4.5 V
R_DS(ON) = 40 mΩ @ V_GS = 2.5 V
R_DS(ON) = 65 mΩ @ V_GS = 1.8 V
• Critical DC electrical parameters specified at
elevated temperature
• High performance trench technology for extremely
low RDS(ON)
• 175°C maximum junction temperature rating
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1)
– Pulsed
(Note 1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDP6021P
FDP6021P
Tube
FDB6021P
FDB6021P
13”
G
Ratings
–20
±8
–28
–80
37
0.25
–65 to +175
4
62.5
Tape width
n/a
24mm
S
D
Units
V
V
A
W
W°C
°C
°C/W
°C/W
Quantity
45
800 units
2001 Fairchild Semiconductor Corporation
FDP6021P/FDB6021P Rev B(W)