FDP5N50U_12 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω

FDP5N50U / FDPF5N50UT
N-Channel MOSFET, FRFET
500V, 4A, 2.0Ω
Features
• R_DS(on) = 1.65Ω ( Typ.)@ V_GS = 10V, I_D = 2A
• Low gate charge ( Typ. 11nC)
• Low C_rss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
May2012
Ultra FRFET^TM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
D
GDS
TO-220
FDP Series
GD S
TO-220F
G
FDPF Series
(potted)
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted*
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50U FDPF5N50UT
500
±30
4
4*
2.4
2.4*
16
16*
216
4
8.5
20
85
28
0.67
0.22
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50U
1.4
0.5
62.5
FDPF5N50UT
4.5
-
62.5
Units
o_C/W
©2012 Fairchild Semiconductor Corporation
1
FDP5N50U / FDPF5N50UT Rev.C1
www.fairchildsemi.com