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FDP5N50U Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel MOSFET, FRFET | |||
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FDP5N50U / FDPF5N50UT
N-Channel MOSFET, FRFET
500V, 4A, 2.0ï
Features
⢠RDS(on) = 1.65ï ( Typ.)@ VGS = 10V, ID = 2A
⢠Low gate charge ( Typ. 11nC)
⢠Low Crss ( Typ. 5pF)
⢠Fast switching
⢠100% avalanche tested
⢠Improved dv/dt capability
⢠RoHS compliant
November2009
Ultra FRFETTM
tm
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchildâs proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor cor-
rection.
D
GDS
TO-220
FDP Series
GD S
TO-220F
G
FDPF Series
(potted)
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50U FDPF5N50UT
500
±30
4
4*
2.4
2.4*
16
16*
216
4
8.5
4.5
85
28
0.67
0.22
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
Rï±JC
Rï±CS
Rï±JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50U
1.4
0.5
62.5
FDPF5N50UT
4.5
-
62.5
Units
oC/W
©2009 Fairchild Semiconductor Corporation
1
FDP5N50U / FDPF5N50UT Rev. A-1
www.fairchildsemi.com
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