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FDP5N50NZF Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel MOSFET 500V, 4.2A, 1.75Ω
FDP5N50NZF / FDPF5N50NZF
N-Channel MOSFET
500V, 4.2A, 1.75Ω
February 2012
UniFET-II TM
Features
• RDS(on) = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A
• Low Gate Charge ( Typ. 9nC)
• Low Crss ( Typ. 4pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GDS
TO-220F
FDPF Series
(potted)
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
( Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP5N50NZF
FDPF5N50NZF
500
±25
4.2
4.2*
2.5
2.5*
16
16*
165
4.2
7.8
20
78
30
0.62
0.24
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink Typ.
Thermal Resistance, Junction to Ambient
©2012 Fairchild Semiconductor Corporation
1
FDP5N50NZF / FDPF5N50NZF Rev. C0
FDP5N50NZF
1.6
0.5
62.5
FDPF5N50NZF
4.1
-
62.5
Units
oC/W
www.fairchildsemi.com