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FDP5800 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET | |||
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November 2006
FDP5800
N-Channel Logic Level PowerTrench® MOSFET
tm
60V,80A, 6mâ¦
Features
⢠RDS(on) = 4.6m⦠(Typ.), VGS = 10V, ID = 80A
⢠High performance trench technology for extermly low Rdson
Applications
⢠Motor/ Body Load Control
⢠Power Train Management
⢠Low gate Charge
⢠Injection Systems
⢠High power and current handing capability
⢠DC-AC Converters and UPS
⢠RoHs Compliant
D
G DS
TO-220
FDP Series
MOSFET Maximum Ratings TC = 25°C unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
-Continuous (TA = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
(Note 1)
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
*Drain current limited by package
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance , Junction to Case
Thermal Resistance , Junction to Ambient, 1in2 copper pad area
Thermal Resistance , Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDP5800
Device
FDP5800
Package
TO220
Reel Size
--
G
S
Ratings
60
±20
80
80*
14
320
652
242
1.61
-55 to +175
Units
V
V
A
A
A
A
mJ
W
W/°C
°C
0.62
°C/W
43
°C/W
62.5
°C/W
Tape Width
--
Quantity
50
©2006 Fairchild Semiconductor Corporation
1
FDP5800 Rev. A
www.fairchildsemi.com
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