FDP5690 Datasheet, PDF (1/16 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrenchTM MOSFET

July 2000
FDP5690/FDB5690
60V N-Channel PowerTrench^TM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R_DS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 32 A, 60 V. R_DS(ON) = 0.027 Ω @ V_GS = 10 V
R_DS(ON) = 0.032 Ω @ V_GS = 6 V.
• Critical DC electrical parameters specified at evevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low
R_DS(ON).
• 175°C maximum junction temperature rating.
D
D
G
D
S
TO-220
FDP Series
G
S
G
TO-263AB
FDB Series
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
FDP5690
FDB5690
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
- Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
60
±20
32
100
58
0.4
-65 to +175
S
Units
V
V
A
W
W/°C
°C
Thermal Characteristics
R_θJC
Thermal Resistance, Junction-to-Case
R_θJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB5690
FDB5690
13’’
FDP5690
FDP5690
Tube
2.6
62.5
Tape Width
24mm
N/A
°C/W
°C/W
Quantity
800
45
2000 Fairchild Semiconductor International
FDP5690/FDB5690 Rev. C