FDP5645 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench MOSFET

March 2000
FDP5645/FDB5645
60V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R_DS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 80 A, 60 V.
R_DS(ON) = 0.0095 Ω @ V_GS = 10 V
R_DS(ON) = 0.011 Ω @ V_GS = 6 V.
• Critical DC electrical parameters specified at
elevated temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor.
• High performance trench technology for extremely
low R . _DS(ON)
• 175°C maximum junction temperature rating.
D
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
V DSS
V GSS
ID
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
– Continuous (note 3)
– Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead termperature for soldering purposes,
1/8“ from case for 5 seconds
FDP5645 FDB5645
60
±20
80
300
125
0.83
-65 to +175
+275
Units
V
V
A
W
W/°C
°C
°C
Thermal Characteristics
RθJ C
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
1.2
°C/W
62.5
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB5645
FDB5645
13”
FDP5645
FDP5645
note 2
Tape width
24mm
Quantity
800 units
© 2000 Fairchild Semiconductor Corporation
FDP5645/FDB5645 Rev B (W)