FDP55N06 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – 60V N-Channel MOSFET

FDP55N06/FDPF55N06
60V N-Channel MOSFET
Features
• 55A, 60V, R_DS(on) = 0.022 Ω @V_GS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET ^TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FDP Series
GD S
G
TO-220F
FDPF Series
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
Drain-Source Voltage
I_D
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current - Pulsed
(Note 1)
V_GSS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
(Note 2)
I_AR
Avalanche Current
(Note 1)
E_AR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering purposes,
1/8∀ from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP55N06
FDPF55N06
60
55
55 *
34.8
34.8 *
220
220 *
± 25
480
55
11.4
4.5
114
48
0.9
0.4
-55 to +150
300
FDP55N06
1.1
0.5
62.5
FDPF55N06
2.58
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
FDP55N06/FDPF55N06 Rev. A
www.fairchildsemi.com